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September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
Features
2.7A, 60V. R DS(ON) = 0.2 ? @ V GS = 10V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
_________________________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDT014
60
±20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
±2.7
A
- Pulsed
±10
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
? 1997 Fairchild Semiconductor Corporation
NDT014 Rev. C1
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